S.D. Sifferman

SCOTT D. SIFFERMAN

Microelectronics Research Center
10100 Burnet Road, Bldg. 160
Austin, TX 78758
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Summary

I am a recent Electrical Engineering Ph.D. graduate and current postdoctoral fellow at the University of Texas at Austin under the supervision of Prof. Seth Bank. My research is focused on the design of GaSb-based mid-infrared (3-5 µm) diode lasers using molecular beam epitaxy (MBE). Through this research we have demonstrated the longest emssion wavelength (> 3.6 μm) for a GaSb-based type-I diode laser with an aluminum-free active region, as well as the first droplet-free epitaxial growth and room-temperature photoluminescence of quinary GaInAsSbBi alloys.

I have over seventeen years experience in system and engineering design, and over fifteen years in academic and industrial research. In addition to my current research focus, I also maintain the MBE facility at The University of Texas at Austin as part of the LASE research group, developing several tools and techniques to aid in maintaining the vacuum chambers while avoiding time-consuming vacuum system bakeouts. I have also developed and automated several test benches to characterize and evaluate novel semiconductor optoelectronic materials.

I have experience using optical and RF laboratory test equipment, cleanroom analysis and fabrication tools, and general laboratory electronics and tools. I take pride implementing and testing successful designs. I am personable, work well with others, and enjoy learning to attack and solve problems from varying points of view.

Education

Professional Associations

Publications

Journal Articles:

  1. R.H. El-Jaroudi, K.M. McNicholas, A.F. Briggs, S.D. Sifferman, L.J.N. , and S.R. Bank, "Room-temperature photoluminescence and electroluminescence of 1.3-µm-range BGaInAs quantum wells on GaAs substrates," Appl. Phys. Lett., vol. 117, no. 2, pp. 021102, July 2020. DOI: 10.1063/5.0011147
  2. K.J. Underwood, A.F. Briggs, S.D. Sifferman, V.B. Verma, N.S. Sirica, R.P. Prasankumar, S.W. Nam, K.L. Silverman, S.R. Bank, and J.T. Gopinath, "Strain dependence of Auger recombination in 3 µm GaInAsSb/GaSb type-I active regions," Appl. Phys. Lett., vol. 116, no. 26, pp. 262103, June 2020. DOI: 10.1063/5.0007512
  3. R. Salas, S. Guchhait, S.D. Sifferman, K.M. McNicholas, V.D. Dasika, D. Jung, E.M. Krivoy, M.L. Lee, and S.R. Bank, "Growth rate and surfactant-assisted enhancements of rare-earth arsenide InGaAs nanocomposites for terahertz generation," APL Materials, vol. 5, no. 9, pp. 096106, Sept. 2017. DOI: 10.1063/1.4991589
  4. R. Salas, S. Guchhait, K.M. McNicholas, S.D. Sifferman, V.D. Dasika, D. Jung, E.M. Krivoy, M.L. Lee, and S.R. Bank, "Surfactant-assisted growth and properties of rare-earth arsenide InGaAs nanocomposites for terahertz generation," Appl. Phys. Lett., vol. 108, no. 18, pp. 182102, May 2016. DOI: 10.1063/1.4948581
  5. (Invited) S.D. Sifferman, H.P. Nair, R. Salas, N.T. Sheehan, S.J. Maddox, A.M. Crook, and S.R. Bank, "Highly strained mid-infrared type-I diode lasers on GaSb," IEEE J. Sel. Top. Quantum Electron., vol. 21, no. 6, pp. 248–257, Nov.-Dec. 2015. DOI: 10.1109/JSTQE.2015.2427742
  6. R. Salas, S. Guchhait, S.D. Sifferman, K.M. McNicholas, V.D. Dasika, E.M. Krivoy, D. Jung, M.L. Lee, and S.R. Bank, "Growth and properties of rare-earth arsenide InGaAs nanocomposites for terahertz generation," Appl. Phys. Lett., vol. 106, no. 8, pp. 081103, Feb. 2015. DOI: 10.1063/1.4913611

Conference Presentations:

  1. S.D. Sifferman, A.F. Briggs, S.J. Maddox, H.P. Nair, and S.R. Bank, "Highly strained, high indium content III-V materials toward 4-micron type-I emitters," 62th Electronic Materials Conf. (EMC), Columbus, OH, June 2020.
  2. A.F. Briggs, K.J. Underwood, S.D. Sifferman, J.T. Gopinath, and S.R. Bank, "Comparison of Auger recombination across material systems with externally applied biaxial strain," 62th Electronic Materials Conf. (EMC), Columbus, OH, June 2020.
  3. K.J. Underwood, A.F. Briggs, S.D. Sifferman, V.B. Verma, N.S. Sirica, R.P. Prasankumar, S.W. Nam, K.L. Silverman, S.R. Bank, and J.T. Gopinath, "Auger recombination in strained mid-infrared quantum wells," Conf. on Lasers and Electro Optics (CLEO), Washington, DC, May 2020. DOI: 10.1364/CLEO_SI.2020.STh4F.3
  4. A.F. Briggs, S.D. Sifferman, K.J. Underwood, J.T. Gopinath, and S.R. Bank, "Externally applied strain on GaSb-based GaInAsSb quantum well membranes," 61th Electronic Materials Conference (EMC), Ann Arbor, MI, June 2019.
  5. R. El-Jaroudi, N.T. Sheehan, K.M. McNicholas, D.J. Ironside, A.F. Briggs, A.M. Skipper, S.D. Sifferman, and S.R. Bank, "Strain engineering of nanomembranes with amorphous silicon," 60th Electronic Materials Conf. (EMC), Santa Barbara, CA, June 2018.
  6. K.M. McNicholas, D.J. Ironside, R. El-Jaroudi, H. Maczko, G. Cossio, L.J. Nordin, S.D. Sifferman, R. Kudrawiec, E.T. Yu, D. Wasserman, and S. Bank, "BGaAs/GaP heteroepitaxy for strain-free luminescent layers on Si," 60th Electronic Materials Conf. (EMC), Santa Barbara, CA, June 2018.
  7. A.K. Rockwell, Y. Yuan, S.D. March, A.H. Jones, M. Woodson, M. Ren, S.D. Sifferman, S.J. Maddox, J.C. Campbell, and S.R. Bank, "III-V digital alloys for mid-IR photodetectors," 60th Electronic Materials Conf. (EMC), Santa Barbara, CA, June 2018.
  8. K.J. Underwood, A.F. Briggs, S.D. Sifferman, S.R. Bank, and J. Gopinath, "Auger recombination in mid-infrared active regions," Conf. on Lasers and Electro Optics (CLEO), San Jose, CA, May 2018. DOI: 10.1364/CLEO_AT.2018.JTh2A.85
  9. S.D. Sifferman, M. Motyka, A.F. Briggs, K.J. Underwood, K.M. McNicholas, R. Kudrawiec, J. Gopinath, and S.R. Bank, "Dilute-bismide alloys for GaSb-based mid-infrared semiconductor lasers," Conf. on Lasers and Electro Optics (CLEO), San Jose, CA, May 2018. DOI: 10.1364/CLEO_SI.2018.STh4I.3
  10. K.M. McNicholas, R.H. El-Jaroudi, A.F. Briggs, S.D. March, S.D. Sifferman, and S.R. Bank, "Growth and properties of B-III-V alloys," 59th Electronic Materials Conf. (EMC), South Bend, IN, June 2017.
  11. K.M. McNicholas, R. Salas, S.D. Sifferman, D. Jung, M.L. Lee, and S.R. Bank, "Growth rate dependent surface morphology of rare earth arsenide films," 59th Electronic Materials Conf. (EMC), South Bend, IN, June 2017.
  12. A.K. Rockwell, M. Woodson, M. Ren, K.M. McNicholas, S.D. Sifferman, S.J. Maddox, J.C. Campbell, and S.R. Bank, "Surfactant-mediated epitaxy of III-V digital alloys," 59th Electronic Materials Conf. (EMC), South Bend, IN, June 2017.
  13. S.D. Sifferman, A.K. Rockwell, K.M. McNicholas, Y. Sun, R. Salas, S.J. Maddox, H.P. Nair, M.L. Lee, and S.R. Bank, "The effects of a bismuth flux on strained-layer III-V optical materials," 59th Electronic Materials Conf. (EMC), South Bend, IN, June 2017.
  14. A.K. Rockwell, S.J. Maddox, Y. Sun, D. Jung, S.D. Sifferman, S.D. March, M.L. Lee, and S.R. Bank, "Growth and properties of broadly-tunable AlInAsSb digital alloys on GaSb," 32nd North American Conference on Molecular Beam Epitaxy (NAMBE), Saratoga Springs, NY, Sept. 2016.
  15. A.K. Rockwell, S.J. Maddox, D. Jung, Y. Sun, S.D. Sifferman, W. Sun, M. Ren, J. Guo, J.C. Campbell, M.L. Lee, and S.R. Bank, "The effect of period thickness on AlInAsSb digital alloys on GaSb," 58th Electronic Materials Conf. (EMC), Newark, DE, June 2016.
  16. (Invited) S.R. Bank, S.D. Sifferman, H.P. Nair, N.T. Sheehan, R. Salas, S.J. Maddox, and A.M. Crook, "Highly strained type-I diode lasers on GaSb," SPIE Photonics West, San Francisco, CA, Feb. 2016.
  17. K.M. McNicholas, E.M. Krivoy, R. Salas, S.D. Sifferman, and S.R. Bank, "Tunable, lattice-matched, epitaxial semimetals," 57th Electronic Materials Conf. (EMC), Columbus, OH, June 2015.
  18. R. Salas, N.T. Sheehan, S. Guchhait, K.M. McNicholas, S.D. Sifferman, V.D. Dasika, E.M. Krivoy, and S.R. Bank, "Properties of growth enhanced ErAs:InGaAs nanocomposites," 57th Electronic Materials Conf. (EMC), Columbus, OH, June 2015.
  19. S.D. Sifferman, R. Salas, S.J. Maddox, H.P. Nair, N.T. Sheehan, E.M. Krivoy, E.S. Walker, and S.R. Bank, "Surfactant-mediated growth of highly strained materials for mid-infrared applications," 57th Electronic Materials Conf. (EMC), Columbus, OH, June 2015.
  20. R. Salas, S. Guchhait, S.D. Sifferman, K.M. McNicholas, V.D. Dasika, D. Jung, M.L. Lee, and S.R. Bank, "Surfactant-mediated growth of RE-As:InGaAs nanocomposites," International Molecular Beam Epitaxy Conf. (IMBE), Flagstaff, AZ, Sept. 2014.
  21. R. Salas, S. Guchhait, S.D. Sifferman, K.M. McNicholas, V.D. Dasika, D.J. Ironside, E.M. Krivoy, S.J. Maddox, D. Jung, M.L. Lee, and S.R. Bank, "Properties of RE-As:InGaAs nanocomposites," 56th Electronic Materials Conf. (EMC), Santa Barbara, CA, June 2014.
  22. S.D. Sifferman, J.W. Schwede, D.C. Riley, R.T. Howe, Z. Shen, N.A. Melosh, and S.R. Bank, "Compositionally-graded structures for photon-enhanced thermionic emitters," 56th Electronic Materials Conf. (EMC), Santa Barbara, CA, June 2014.
  23. S. Vaithilingam, I.O. Wygant, S. Sifferman, X. Zhuang, Y. Furukawa, O. Oralkan, S. Keren, S.S. Gambhir, and B.T. Khuri-Yakub, "1E-3 tomographic photoacoustic imaging using capacitive micromachined ultrasonic transducer (CMUT) technology," 2006 IEEE Ultrasonics Symposium, Ultrasonics Symposium, 2006. IEEE, pp. 397–400, Oct. 2006. DOI: 10.1109/ULTSYM.2006.112